BUK7880-55A(2007) データシート - NXP Semiconductors.
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BUK7880-55A
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NXP Semiconductors.
General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.
FEATUREs
■ Very low on-state resistance
■ Q101 compliant
■ 150 °C rated
■ Standard level compatible
APPLICATIONs
■ Automotive systems
■ General purpose power switching
■ Motors, lamps and solenoids
■ 12 V and 24 V loads
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