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BU99901GUZ-W(2009) データシート - ROHM Semiconductor

BU99901GUZ-W image

部品番号
BU99901GUZ-W

コンポーネント説明

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  2010   lastest PDF  

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page
12 Pages

File Size
278.1 kB

メーカー
ROHM
ROHM Semiconductor ROHM

PRODUCT 
   4K×8 bit Electrically Erasable PROM

USE
   General purpose


FEATURES 
◾ 4K words × 8 bits architecture serial EEPROM
◾ Wide operating voltage range (1.7V~3.6V)
◾ Two wire serial interface
◾ Self-timed write cycle with automatic erase
◾ 32 byte Page Write mode
◾ Low power consumption。
   Write (3.3V) : 0.6mA (Typ.)
   Read (3.6V) : 0.6mA (Typ.)
   Standby (3.6V) : 0.1μA (Typ.)
◾ DATA security
   Write protect feature (WP pin)
   Inhibit to WRITE at low VCC
◾ WLCSP 6pin package
◾ High reliability fine pattern CMOS technology
◾ Endurance : 100,000 erase/write cycles
◾ Data retention : 40 years
◾ Filtered inputs in SCL•SDA for noise suppression
◾ Initial data FFh in all address
◾ Pull-up resistor inputs in SCL•SDA


部品番号
コンポーネント説明
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