General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
FEATUREs and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection: 2 kV HBM
APPLICATIONs
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits