„DESCRIPTION
The BS62LV1027 is a  high  performance, very low  power CMOS Static Random Access Memory organized as 131,072 words  by 8  bits and operates from a wide range of  2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit  techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA at 3V/25oC and maximum access time of 55ns at 3V/85^oC. Easy  memory  expansion is provided by  an  active LOW  chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers.

FEATURES
Wide Vcc operation voltage : 2.4V ~ 5.5V
Very low power consumption :
  Vcc = 3.0V  C-grade : 17mA (@55ns) operating current
                       I- grade : 18mA (@55ns) operating current
                       C-grade : 14mA (@70ns) operating current
                       I- grade : 15mA (@70ns) operating current
                       0.1uA (Typ.) CMOS standby current
  Vcc = 5.0V C-grade : 46mA (55ns) operating current
                      I- grade : 47mA (55ns) operating current
                     C-grade : 38mA (70ns) operating current
                     I- grade : 39mA (70ns) operating current
                     0.6uA (Typ.) CMOS standby current
High speed access time :
  -55 55ns
  -70 70ns
Automatic power down when chip is deselected
Easy expansion with CE2, CE1, and OE options
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V