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BS616LV4025 データシート - Brilliance Semiconductor

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部品番号
BS616LV4025

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11 Pages

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183.5 kB

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BSI
Brilliance Semiconductor BSI

DESCRIPTION
The BS616LV4025 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits or 524,288 bytes by 8 bits selectable by CIO pin and operates from a wide range of 4.5V to 5.5V supply voltage.


FEATURES
• Operation voltage : 4.5~5.5V
• Low power consumption :
    Vcc = 5.0V C-grade: 45mA (Max.) operating current
                       I-grade : 50mA (Max.) operating current
                       1.5uA (Typ.) CMOS standby current
• High speed access time :
    -70 70ns (Max.) at Vcc=5V
    -55 55ns (Max.) at Vcc=5V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

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部品番号
コンポーネント説明
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メーカー
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Brilliance Semiconductor
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Brilliance Semiconductor

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