General description
160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz.

FEATUREs and benefits
■ Designed for broadband operation (1880 MHz to 2025 MHz)
■ Decoupling leads to enable improved video bandwidth
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Internally matched for ease of use
■ High power gain
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

APPLICATIONs
■ RF power amplifiers for base station and multi-carrier applications in the 1880 MHz to
   2025 MHz frequency range