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BLF7G10L-250(2011) データシート - NXP Semiconductors.

BLF7G10L-250 image

部品番号
BLF7G10L-250

コンポーネント説明

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10 Pages

File Size
99.1 kB

メーカー
NXP
NXP Semiconductors. NXP

General description
250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.


FEATUREs and benefits
■ Excellent ruggedness
■ High efficiency
■ Low Rth providing excellent thermal stability
■ Designed for broadband operation (920 MHz to 960 MHz)
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)


APPLICATIONs
■ RF power amplifiers for W-CDMA base stations and multi carrier applications in the
   920 MHz to 960 MHz frequency range


部品番号
コンポーネント説明
PDF
メーカー
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