DESCRIPTION
NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package.

FEATURES
• High power gain
• High efficiency
• 1.9 GHz operating area
• Linear and non-linear operation.

APPLICATIONS
• Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc.
• Driver for DCS1800, 1900.