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BD827 データシート - Inchange Semiconductor

BD827 image

部品番号
BD827

コンポーネント説明

Other PDF
  no available.

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page
2 Pages

File Size
248.1 kB

メーカー
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 60V(Min)
• High DC Current Gain
• Low Saturation Voltage
• Complement to Type BD828
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation


APPLICATIONS
• Designed for driver-stages in hi-fi amplifiers and
   television circuits.


部品番号
コンポーネント説明
PDF
メーカー
Silicon NPN Power Transistor
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Silicon NPN Power Transistor
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Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
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Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor

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