BAV756S,125(2015) データシート - NXP Semiconductors.
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BAV756S,125
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NXP Semiconductors.
General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
FEATUREs and benefits
■ High switching speed: trr ≤ 4 ns
■ Low capacitance: Cd ≤ 2 pF
■ Low leakage current
■ Reverse voltage: VR ≤ 90 V
■ Small SMD plastic packages
■ AEC-Q101 qualified
APPLICATIONs
■ High-speed switching
■ General-purpose switching
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