Features
◆ For general purpose applications.
◆ This diode features low turn-on voltage. This device is
   protected by a PN junction guard ring against excessive
   voltage, such as electrostatic discharges
◆ Metal-on-silicon Schottky barrier device which is protected by a
   PN junction guard ring. The low forward voltage drop and fast
   switching make it ideal for protection of MOS devices, steering,
   biasing and coupling diodes for fast switching and low logic
   level applications.
◆ This diode is also available in the MiniMELF case with type
   designation BAS86.

Mechanical Data
◆ Case: DO-35 Glass Case
◆ Weight: approx. 0.13g