Description
Atmel® AT30TSE002B is a combination serial EEPROM and temperature sensor device containing 2048-bits of serially electrically-erasable and programmable read only memory (EEPROM) organized as 256-bytes of 8-bits each and could be used to store memory module and vendor information. The EEPROM operation is tailored specifically for DRAM Memory Modules Serial Presence Detect (SPD). The first 128-bytes of the memory incorporate a permanent and a reversible software write protection (WP) feature. Once the permanent software WP is enabled, by sending a special command, it cannot be reversed. However, once the reversible software WP is enabled, it can be reversed by sending a special command.

FEATUREs
• Integrated Temperature Sensor (TS) + 2Kbit Serial EEPROM
• Jedec (JC42.4) SO-DIMM SPD + TS compliant
• Standard voltage operation
   ― Optimized for voltage range: 2.7V to 3.6V
• 100khz and 400khz Compatibility
• Two-wire Serial Interface: I2C/SMBus™ compatible
   ― SMBus Timeout supported
• Schmitt Trigger, filtered inputs for Noise Suppression
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
   ― 8-pad Very Very Thin DFN (2 x 3 x 0.8mm)

Serial EEPROM Features
• Permanent and Reversible Software Write Protection for the First-half of the Array
   ― Software Procedure to Verify Write Protect Status
• Internally organized as one block of 256-bytes (256 x 8)
• Supports Byte and Page Write operation
   ― Write 1-, 2-, 3-, up to 16-bytes at a time
• Self-timed Write cycle (5ms max)
• High-reliability
   ― Endurance: 1 Million Write Cycles
   ― Data Retention: 100 years
• Low Operating current
   ― EEPROM Write ~1.5mA (typ.)
   ― EEPROM Read ~ 0.2mA (typ.)

Temperature Sensor Features
• 11-bit ADC Temp-to-Digital Converter with 0.125°C resolution
• Programmable hysteresis threshold: off, 0°C, 1.5°C, 3°C, 6 °C
• B-grade Accuracy
   ― ±1°C (max.) for +75°C to +95°C
   ― ±2°C (max.) for +40°C to +125°C
   ― ±3°C (max.) for -20°C to +125°C
• Low Operating current
   ― Temperature Sensor Active ~ 0.2mA (typ.)