Functional description
The 4C4M4EOQ, and AS4C4M4E1Q are high performance 16-megabit CMOS Quad CAS Dynamic Random Access Memories (DRAM) organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in PC, workstation, router and switch applications.

FEATUREs
• Organization: 4,194,304 words × 4 bits
• High speed
    - 50/60 ns RAS access time
    - 25/30 ns column address access time
    - 12/15 ns CAS access time
• Low power consumption
    - Active: 495 mW max
    - Standby: 5.5 mW max, CMOS I/O
• Extended data out
• Refresh
    - 4096 refresh cycles, 64 ms refresh interval for 4C4M4EOQ
    - 2048 refresh cycles, 32 ms refresh interval for AS4C4M4E1Q
    - RAS-only and hidden refresh or CAS-before-RAS refresh or self-refresh
• TTL-compatible
• 4 separate CAS pins allow for separate I/O operation
• JEDEC standard package
    - 300 mil, 28-pin SOJ
    - 300 mil, 28-pin TSOP
• 5V power supply
• Latch-up current ≥ 200 mA
• ESD protection ≥ 2000 mV