FEATURES
1. 1 Form B (Normally-closed) type with low on-resistance
    This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method.
2. Controls low-level analog signals
    PhotoMOS feature extremely low closed circuit offset voltage to enable control of low-level analog signals without distortion.
3. High sensitivity and low on-resistance
    Can control max. 0.2 A load current with 5 mA input current. Low on-resistance of Typ. 5.5 Ω (AQV453).
4. Reinforced insulation 5,000 Vrms type also available.
    More than 0.4 mm .016 inch internal insulation distance between inputs and outputs. Conforms to IEC950 (reinforced insulation).

TYPICAL APPLICATIONS
• Security equipment
• High-speed inspection machines
• Measuring instruments
• Telephone equipment
• Sensing equipment