HE (High-function Economy) Type  1- Channel (Form B) Type

FEATURES
1. Form B (Normally-closed) type
   Has been realized thanks to the built-in  MOSFET processed by our proprietary  method, DSD (Double-diffused and Selective Doping) method.
2. Controls low-level analog signals
   PhotoMOS relays feature extremely low  closed-circuit offset voltage to enable  control of low-level analog signals without  distortion.
3. High sensitivity, low ON resistance
   Can control a maximum 0.15 A load current with a 5 mA input current. Low ON resistance of 16 Ω (AQV454). Stable  operation because there are no metallic  contact parts.

4. Controls various types of load such  as relays, motors, lamps and solenoids.
5. Eliminates the need for a power supply to drive the power MOSFET
   A power supply used to drive the power  MOSFET is unnecessary because of the  built-in optoelectronic device. This results  in easy circuit design and small PC board  area.
6. Low thermal electromotive force  (Approx. 1 µV) (Basic insulation)
7. Reinforced insulation 5,000 V type  also available.
   More than 0.4 mm .016 inch  internal insulation distance between inputs and outputs. Conforms to IEC950 (reinforced  insulation).

TYPICAL APPLICATIONS
• Security equipment
• High-speed inspection machines
• Measuring instruments
• Telephone equipment
• Sensors