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AO8808AL データシート - Alpha and Omega Semiconductor

AO8808A image

部品番号
AO8808AL

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4 Pages

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100.6 kB

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AOSMD
Alpha and Omega Semiconductor AOSMD

General Description
The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. Standard Product AO8808A is Pb-free (meets ROHS & Sony 259 specifications). AO8808AL is a Green Product ordering option. AO8808A and AO8808AL are electrically identical.


FEATUREs
    VDS (V) = 20V
    ID = 7.9A (VGS = 10V)
    RDS(ON) < 14mΩ (VGS = 10V)
    RDS(ON) < 15mΩ (VGS = 4.5V)
    RDS(ON) < 20mΩ (VGS = 2.5V)
    RDS(ON) < 28mΩ (VGS = 1.8V)
    ESD Rating: 2000V HBM


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Dual N-Channel Enhancement Mode Field Effect Transistor
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Dual N-Channel Enhancement Mode Field Effect Transistor
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Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics

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