datasheetbank_Logo
データシート検索エンジンとフリーデータシート
HOME  >>>  ACE Technology Co., LTD.  >>> ACE2305B PDF

ACE2305B データシート - ACE Technology Co., LTD.

ACE2305B image

部品番号
ACE2305B

Other PDF
  no available.

PDF
DOWNLOAD     

page
6 Pages

File Size
927.7 kB

メーカー
ACE
ACE Technology Co., LTD. ACE

Description
The ACE2305B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.


FEATUREs
● VDS=-20V, ID=-4A
● RDS(ON)<55mΩ @ VGS=-4.5V
● RDS(ON)<63mΩ @ VGS=-2.5V
● RDS(ON)<83mΩ @ VGS=-1.8V
● ESD Protected: 3000V HBM


部品番号
コンポーネント説明
PDF
メーカー
P-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
P-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
P-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
P-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
P-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
P-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
P-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
P-Channel Enhancement Mode Field Effect Transistor
Chino-Excel Technology
P-Channel Enhancement Mode Field Effect Transistor
ACE Technology Co., LTD.
P-Channel Enhancement Mode Field Effect Transistor
Chino-Excel Technology

Share Link: GO URL

EnglishEnglish Korean한국어 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]