A1431(1997) データシート - Toshiba
部品番号
A1431
Other PDF
PDF
page
2 Pages
File Size
153.1 kB
メーカー
Toshiba
STROBE FLASH APPLICATIONS.
MEDIUM POWER AMPLIFIER APPLICATIONS.
• High DC Current Gain and Excellent hFE Linearity
: hFE(1)= 100~320 (VCE= −2 V, IC= −0.5 A)
: hFE(2)= 70 (Min.) (VCE= −2 V, IC= −4 A)
• Low Saturation Voltage
: VCE (sat)= −1.0 V (Max.) (IC= −4 A, IB= −0.1 A)
部品番号
コンポーネント説明
PDF
メーカー
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2007 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
Share Link: