A1162(1997) データシート - Toshiba
部品番号
A1162
Other PDF
PDF
page
2 Pages
File Size
150.4 kB
メーカー
Toshiba
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS.
• High Voltage and High Current
: VCEO= −50 V, IC= −150 mA (Max.)
• Excellent hFE Linearity
: hFE(IC= −0.1 mA)/hFE(IC= −2 mA) = 0.95 (Typ.)
• High hFE: hFE= 70~400
• Low Noise: NF = 1dB (typ.), 10dB (Max.)
• Complementary to 2SC2712
• Small Package
部品番号
コンポーネント説明
PDF
メーカー
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2007 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
Share Link: