General Description
These  N-Channel  enhancement  mode  power  field  effect transistors   are   produced   using   Fairchildís   proprietary, planar stripe,  DMOS technology. This advanced technology has been especially tailored to minimize  on-state  resistance,  provide  superior  switching performance,  and  withstand  high  energy  pulse  in  the avalanche and commutation mode. These devices are well suited  for  high  efficiency  switched  mode  power  supplies, active  power  factor  correction,  electronic  lamp  ballasts based on half bridge topology.

FEATUREs
• 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V
• Low gate charge ( typical  16 nC)
• Low Crss ( typical  7 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilit