DESCRIPTION:
   Maxwell Technologies’ 69F1608 high-performance flash memory is a 16M x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit. A program operation programs the 528-byte page in 250 µ s and an erase operation can be performed in 2 ms on an 8K-byte block. Data within a page can be read out at 50 ns cycle time per byte. The on-chip write controller automates all program and erase functions, including pulse repetition, where required, and internal verify and margining of data.

FEATURES:
• Single 5.0 V supply
• Organization:
   - Memory cell array: (4M + 128k) bit x 8bit
   - Data register: (512 + 16) bit x 8bit
   - Contains 4 (32 Megabit) Die
• Automatic program and erase
   - Page program: (512 + 16) Byte
   - Block erase: (8K + 256) Byte
   - Status register
• 528-Byte page read operation
   - Random access: 10 µ s (max)
   - Serial page access: 50 ns (min)
• Fast write cycle time
   - Program time: 250 µ s (typ)
   - Block erase time: 2 ms (typ)
• Command/address/data multiplexed I/O port
• Hardware data protection
   - Program/erase lockout during power transitions
• Reliable CMOS floating-gate technology
   - Endurance: 1,000,000 program/erase cycles
   - Data retention: 10 years
• Command register operation