3N150(2020) データシート - STMicroelectronics
部品番号
3N150
Other PDF
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page
22 Pages
File Size
664.4 kB
メーカー
STMicroelectronics
Description
These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
FEATUREs
• 100% avalanche tested
• Intrinsic capacitances and Qg minimized
• High speed switching
• Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
APPLICATIONs
• Switching applications
部品番号
コンポーネント説明
PDF
メーカー
N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3™ Power MOSFET in TO-3PF, TO-220 and TO-247 packages
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N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF ( Rev : 2009 )
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N-channel 650 V, 0.073 Ω typ., 30 A MDmesh™ V Power MOSFETs in TO-220FP and TO-3PF packages ( Rev : 2014 )
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N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3™ Power MOSFET in TO-220FP, TO-3PF and TO-220 packages
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N-channel 1500 V - 5 Ω - 4 A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF
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N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in TO-220FP and TO-3PF packages
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N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages ( Rev : 2020 )
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N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages
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N-channel 525 V, 0.72 Ω typ., 6 A, MDmesh™ K3 Power MOSFETs in DPAK and TO-220 packages ( Rev : 2018 )
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