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3DD13002_ データシート - Jiangsu Changjiang Electronics Technology Co., Ltd

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部品番号
3DD13002_

コンポーネント説明

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3 Pages

File Size
859.7 kB

メーカー
Jiangsu
Jiangsu Changjiang Electronics Technology Co., Ltd Jiangsu

TRANSISTOR( NPN )


FEATURES
   Power dissipation
      PCM : 1.25 W( Tamb=25℃)
   Collector current
      ICM : 1 A
   Collector-base voltage
      V(BR)CBO : 600 V
   Operating and storage junction temperature range
      TJ, Tstg: -55℃ to +150℃


部品番号
コンポーネント説明
PDF
メーカー
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TO-251 Plastic-Encapsulate Transistors
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TO-251-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-251-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-251-3LPlastic-EncapsulateTransistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-251-3LPlastic-EncapsulateTransistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-251-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-251-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-251-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd

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