3DD13002B-TO-92 データシート - Jiangsu Changjiang Electronics Technology Co., Ltd
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3DD13002B-TO-92
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Jiangsu Changjiang Electronics Technology Co., Ltd
FEATURE
Power dissipation
PCM: 900 mW (Tamb=25℃)
Collector current
ICM: 3DD13002: 1 A
3DD13002B: 0.8 A
Collector-base voltage
V(BR)CBO: 600 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
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TO-92 Plastic-Encapsulate NPN Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-92 Plastic-Encapsulate NPN Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-92 Plastic -Encapsulate NPN Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
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