The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode
used in anti-parallel is the development type TA49373.

FEATUREs
• >100kHz Operation At 390V, 30A
• 200kHz Operation At 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . .  60ns at TJ= 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model www.fairchildsemi.com