Description
The device is a NPN transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCESAT behaviour. Recommended for 45W to 70W high fidelity audio frequency amplifier output stage.

FEATUREs
■ High breakdown voltage VCEO = 80V
■ Complementary to 2STW1693
■ Typical ft = 20MHz
■ Fully characterized at 150 °C

APPLICATIONs
■ Audio power amplifier