2SK3407 データシート - Toshiba
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2SK3407
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Toshiba
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.)
• High forward transfer admittance: |Yfs| = 7.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)
• Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) ( Rev : 1999 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )
Toshiba
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