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2SK3160-E(2005) データシート - Renesas Electronics

2SK3160 image

部品番号
2SK3160-E

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8 Pages

File Size
77.2 kB

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Renesas
Renesas Electronics Renesas

Features
• Low on-resistance
    RDS =130 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source

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コンポーネント説明
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Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
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Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics

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