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2SK2996 データシート - Toshiba

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2SK2996

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HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
DC−DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS

• Low Drain−Source ON Resistance : RDS (ON) = 0.74 Ω (Typ.)
• High Forward Transfer Admittance : |Yfs| = 6.8 S (Typ.)
• Low Leakage Current : IDSS = 100 μA (Max.) (VDS = 600 V)
• Enhancement-Mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) ( Rev : 1999 )
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2010 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Toshiba

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