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2SK1119(1998) データシート - Toshiba

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2SK1119

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HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS
DC−DC CONVERTER AND MOTOR DRIVE APPLICATIONS

● Low Drain−Source ON Resistance : RDS (ON) = 3.0 Ω (Typ.)
● High Forward Transfer Admittance : |Yfs| = 2.0 S (Typ.)
● Low Leakage Current : IDSS = 300 μA (Max.) (VDS = 800 V)
● Enhancement-Mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) ( Rev : 2006 )
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π-MOSII .5)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) ( Rev : 2006 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOS TYPE (π−MOSII.5)
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