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2SD314 データシート - Inchange Semiconductor

2SD314 image

部品番号
2SD314

コンポーネント説明

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2 Pages

File Size
231.9 kB

メーカー
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 60V(Min)
• Low Collector-Emitter Saturation Voltage-
   : VCE(sat)= 1.0V(Max) @IC= 2.0A
• Complement to Type 2SB508
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation


APPLICATIONS
• Designed for the output stage of 15W to 25W AF power
   amplifier.


部品番号
コンポーネント説明
PDF
メーカー
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor ( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor

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