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2SD2707T2L(2013) データシート - ROHM Semiconductor

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部品番号
2SD2707T2L

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12 Pages

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NPN 150mA 50V Muting Transistors


FEATUREs
1) High DC current gain. hFE =2700 (Max.)
2) High emitter-base voltage. VEBO is Min. 12V
3) Low VCE(sat) VCE(sat)=0.3V(Max.) (IC/IB=50mA/5mA)
4) Lead Free/RoHS Compliant.


APPLICATIONs
    Muting circuit

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