DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
• Good Linearity of hFE
• 100% avalanche tested
• Complement to Type 2SB1109
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for low frequency and high-voltage amplifier
applications.