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2SC6076(TE16L1,NV) データシート - Toshiba

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2SC6076(TE16L1,NV)

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Power Amplifier Applications
Power Switching Applications

Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A)
High-speed switching: tstg = 0.4 μs (typ.)

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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