datasheetbank_Logo
データシート検索エンジンとフリーデータシート
HOME  >>>  Toshiba  >>> 2SC2655 PDF

2SC2655 データシート - Toshiba

2SC2655 image

部品番号
2SC2655

Other PDF
  1998   2009  

PDF
DOWNLOAD     

page
5 Pages

File Size
134.8 kB

メーカー
Toshiba
Toshiba Toshiba

Power Amplifier Applications
Power Switching Applications
​​​​​​​
•  Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A)
•  High collector power dissipation: PC= 900 mW
•  High-speed switching: tstg= 1.0 μs (typ.)
•  Complementary to 2SA1020.

Page Link's: 1  2  3  4  5 

部品番号
コンポーネント説明
PDF
メーカー
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2007 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba

Share Link: GO URL

EnglishEnglish Korean한국어 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]