2SB906-Y(TE16L1,NQ) データシート - Toshiba
部品番号
2SB906-Y(TE16L1,NQ)
Other PDF
PDF
page
4 Pages
File Size
155 kB
メーカー
Toshiba
Audio Frequency Power Amplifier Application
• Low collector saturation voltage : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)
• High power dissipation: PC = 20 W (Tc = 25°C)
• Complementary to 2SD1221
部品番号
コンポーネント説明
PDF
メーカー
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) ( Rev : 2011 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) ( Rev : 2002 )
Toshiba
Share Link: