2SA608S データシート - Jiangsu Changjiang Electronics Technology Co., Ltd
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2SA608S
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Jiangsu Changjiang Electronics Technology Co., Ltd
TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM : 300 mW (Tamb=25℃)
Collector current
ICM : -100 mA
Collector-base voltage
V(BR)CBO : -40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
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TO-92S Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-92S Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-92S Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-92S Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-92S Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-92S Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-92S Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-92S Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-92S Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
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