2.25A, 200V, 1.500Ohm, N-Channel Power MOSFET

The 2N6784 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directlyfrom integrated circuits.

FEATUREs
• 2.25A, 200V
• rDS(ON) = 1.500Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear TransferCharacteristics
• High Input Impedance
• Majority CarrierDevice