Darlington Complementary Silicon Power Transistors

. . . designed for general–purpose amplifier and low frequency switching applications.

• High DC Current Gain —
   hFE = 3500 (Typ) @ IC = 5.0 Adc
• Collector–Emitter Sustaining Voltage — @ 100 mA
   VCEO(sus) = 80 Vdc (Min) — 2N6058
                         100 Vdc (Min) — 2N6052, 2N6059
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors