2N6052G データシート - ON Semiconductor
部品番号
2N6052G
Other PDF
no available.
PDF
page
5 Pages
File Size
120.8 kB
メーカー
ON Semiconductor
Darlington Complementary Silicon Power Transistors
This package is designed for general−purpose amplifier and low frequency switching applications.
FEATUREs
• High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc
• Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min)
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• This is a Pb−Free Device*
部品番号
コンポーネント説明
PDF
メーカー
Share Link: