Overview
   The W30 flash memory device provides Read-While-Write (RWW) and Read-WhiteErase (RWE) capability. This capability provides high-performance synchronous and asynchronous reads in package-compatible densities using a 16-bit data bus. Individually-erasable memory blocks are optimally sized for code and data storage. Eight 4-Kword parameter blocks are located in the parameter partition at either the top or bottom of the memory map. The rest of the memory array is grouped into 32-Kword main blocks.

   The memory architecture for the W30 flash memory device consists of multiple 4-Mbit partitions, the exact number depending on the flash device density. By dividing the memory array into partitions, program or erase operations can take place simultaneously during read operations. Burst reads can traverse partition boundaries, but user application code is responsible for ensuring that burst reads do not extend into a partition that is actively programming or erasing. Although each partition has burstread, write, and erase capabilities, simultaneous operation is limited to write or erase in one partition while other partitions are in a read mode.