Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters.

FEATUREs
■ Fully insulated and low profile package with
   increased creepage path from pin to heatsink
   plate
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

APPLICATIONs
■ Switching applications