VDSS = 100 V
ID25 = 165 A
RDS(on)= 8 m
Ω
trr ≤ 250 ns

Single MOSFET Die

FEATUREs
• Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<25pF)
• Low RDS (on) HDMOS™ process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Fast intrinsic Rectifier

APPLICATIONs
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control