Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.

FEATUREs
• RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A
• RDS(on) = 175 mΩ (Typ.) @ VGS = 5.0 V, ID = 2.1 A
• Low Gate Charge (Typ. 2.78 nC)
• Low Crss (Typ. 2.04 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant

APPLICATIONs
• LED Monitor Backlight
• LED TV Backlight
• LED Lighting
• Consumer Appliances,
   DC-DC converter (Step up & Step down)