11N60M2EP データシート - STMicroelectronics
部品番号
11N60M2EP
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14 Pages
File Size
299 kB
メーカー
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.
FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
部品番号
コンポーネント説明
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N-channel 600 V, 0.230 Ω typ., 13 A, MDmesh™ M2 EP Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package ( Rev : 2015 )
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N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 1.3 Ω typ., 3.5 A MDmesh™ M2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP Power MOSFET in a TO-220 package ( Rev : 2018 )
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N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP Power MOSFET in a TO-220 package
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N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP Power MOSFET in a DPAK package
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N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP Power MOSFET in a DPAK package ( Rev : 2018 )
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N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
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