106C025-20-W-AG データシート - Transys Electronics Limited
部品番号
106C025-20-W-AG
Other PDF
no available.
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page
1 Pages
File Size
153 kB
メーカー
Transys Electronics Limited
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Chromium Barrier
>1000V ESD (MM)
部品番号
コンポーネント説明
PDF
メーカー
Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 30 Amp, 0.38VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 60 Mils, 20 Volt, 3 Amp, 0.38VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 0.5 Amp, 0.34VF.
Transys Electronics Limited
Schottky Barrier Diode Wafer 106 Mils, 200 Volt, 10 Amp
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 51 Mils, 25 Volt, 1 Amp, 0.33VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 1 Amp, 0.37VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 65 Mils, 25 Volt, 3 Amp, 0.38VF.
Transys Electronics Limited
Schottky Barrier Diode Wafer 106 Mils, 200 Volt, 10 Amp
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 20 Volt, 1 Amp, 0.35VF.
Transys Electronics Limited
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