STW8NC90Z データシートの表示（PDF） - STMicroelectronics

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STW8NC90Z

N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH™III MOSFET

STMicroelectronics 

STW8NC90Z

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max

0.66

Rthj-amb Thermal Resistance Junction-ambient Max

30

Rthc-sink Thermal Resistance Case-sink Typ

0.1

Tl

Maximum Lead Temperature For Soldering Purpose

300

AVALANCHE CHARACTERISTICS

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Max Value

7.6

430

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max.

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

900

∆BVDSS/∆TJ

Breakdown Voltage Temp.

Coefficient

ID = 1 mA, VGS = 0

1

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

50

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ±20V

±10

°C/W

°C/W

°C/W

°C

Unit

A

mJ

Unit

V

V/°C

µA

µA

µA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

ID(on)

On State Drain Current

Test Conditions

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 3.8 A

VDS > ID(on) x RDS(on)max,

VGS = 10V

Min.

3

Typ.

4

1.1

Max.

5

1.38

Unit

V

Ω

7.6

A

DYNAMIC

Symbol

Parameter

gfs (1) Forward Transconductance

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(on) x RDS(on)max,

ID =3.8A

Min.

VDS = 25V, f = 1 MHz, VGS = 0

Typ.

9

3550

205

25

Max.

Unit

S

pF

pF

pF

2/8

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