STW8NC90Z データシートの表示（PDF） - STMicroelectronics

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STW8NC90Z

N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH™III MOSFET

STMicroelectronics 

STW8NC90Z

N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247

Zener-Protected PowerMESH™III MOSFET

TYPE

VDSS

RDS(on)

ID

STW8NC90Z

900 V < 1.38 Ω 7.6 A

s TYPICAL RDS(on) = 1.1 Ω

s EXTREMELY HIGH dv/dt CAPABILITY GATE-

TO-SOURCE ZENER DIODES

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsur-

passed on-resistance per unit area while integrating

back-to-back Zener diodes between gate and

source. Such arrangement gives extra ESD capabil-

ity with higher ruggedness performance as request-

ed by a large variety of single-switch applications.

APPLICATIONS

s SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

s WELDING EQUIPMENT

TO-247

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM (q) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

IGS

Gate-source Current (*)

VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)

dv/dt (1) Peak Diode Recovery voltage slope

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1)ISD ≤7.6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*)Limited only by maximum temperature allowed

July 2000

Value

900

900

±25

7.6

4.8

30

190

1.51

±50

4

3

–65 to 150

150

Unit

V

V

V

A

A

A

W

W/°C

mA

KV

V/ns

°C

°C

1/8

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