STP12NM50FDFP データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
一致するリスト
STP12NM50FDFP
STMicroelectronics
STP12NM50FDFP Datasheet PDF : 18 Pages
| |||
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Test Condictions
VDD=250 V, ID= 6A,
RG=4.7Ω, VGS=10V
(see Figure 17)
VDD=400 V, ID= 12A,
RG=4.7Ω, VGS=10V
(see Figure 17)
Min. Typ. Max. Unit
19
ns
10
ns
39
ns
18
ns
29
ns
Table 7. Source drain diode
Symbol
Parameter
Test condictions
Min Typ. Max Unit
ISD Source-drain current
12 A
ISDM(1) Source-drain current (pulsed)
48 A
) VSD(2) Forward on voltage
ISD=12A, VGS=0
t(s trr
c Qrr
du IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=12A, Tj=25°C
di/dt = 100A/µs,
VDD=30V, (see Figure 22)
ro trr
P Qrr
te IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=12A, Tj=150°C
di/dt = 100A/µs,
VDD=30V, (see Figure 22)
le 1. Pulse width limited by safe operating area
Obsolete Product(s) - Obso 2. Pulsed: pulse duration=300µs, duty cycle 1.5%
1.5 V
140
ns
800
nC
11
A
252
ns
1890
nC
15
A
5/18
Share Link: