STP12NM50FDFP データシートの表示（PDF） - STMicroelectronics

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STP12NM50FDFP

N-channel 500V - 0.32Ω - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh™ Power MOSFET (with fast diode)

STMicroelectronics 

STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Value

Symbol

Parameter

TO-220/

D²/I²PAK

Unit

TO-220FP TO-247

VDS Drain-source voltage (VGS = 0)

500

V

VDGR Drain-gate voltage (RGS = 20KΩ)

500

V

VGS Gate-source voltage

± 30

V

ID Drain current (continuous) at TC = 25°C

12

12(1)

14

A

ID Drain current (continuous) at TC=100°C

7.5

7.5(1)

8.8

A

IDM(2) Drain current (pulsed)

) PTOT Total dissipation at TC = 25°C

t(s Derating factor

uc dv/dt(3) Peak diode recovery voltage slope

rod VISO

P TJ

te Tstg

Insulation withstand voltage (DC)

Operating junction temperature

Storage temperature

le 1. Limited only by maximum temperature allowed

o 2. Pulse width limited by safe operating area

s 3. ISD ≤12A, di/dt ≤400A/µs, VDD =80%V(BR)DSS

- Ob Table 2. Thermal resistance

48

48 (1)

160

35

1.28

0.28

20

--

2500

-65 to 150

56

A

160

W

1.4 W/°C

V/ns

--

V

°C

Value

ct(s) Symbol

Parameter

TO-220

Unit

D²PAK TO-220FP TO-247

I²PAK

du Rthj-case Thermal resistance junction-case Max

ro Rthj-a Thermal resistance junction-ambient Max

te P Tl

Maximum lead temperature for soldering

purpose

0.78

62.5 100

3.57

0.77

62.5

300

°C/W

°C/W

°C

oleTable 3. Avalanche data

Obs Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not-repetitive

IAR (pulse width limited by Tj Max)

6

A

Single pulse avalanche energy

EAS (starting Tj=25°C, Id=Iar, Vdd=50V)

400

mJ

3/18

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